onsemi JFET N-Channel J112G. This TO-92 packaged device offers a 35V breakdown voltage and 350mW maximum power dissipation. Key electrical characteristics include a drain current (Idss) of 5mA at 15V with Vgs=0, a cutoff voltage (Vgs off) of 1V at 1µA, and a typical RDS(On) of 50 Ohms. The J112G is designed for through-hole mounting and operates across a wide temperature range of -65°C to 150°C. This component is suitable for applications in general-purpose switching and amplification circuits within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Supplier Device Package | TO-92 (TO-226) |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 50 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
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