onsemi JFET N-Channel J111RLRAG. This JFET features a 35V breakdown voltage with a maximum drain current (Idss) of 20 mA at 15V. The device offers a typical gate-source cutoff voltage (VGS off) of 3V at 1 µA and a drain-source on-resistance (RDS(On)) of 30 Ohms. With a maximum power dissipation of 350 mW, it is presented in a TO-92 (TO-226) package suitable for through-hole mounting. The operating temperature range is -65°C to 150°C. This component is commonly utilized in industrial and consumer electronics applications for switching and amplification functions. The J111RLRAG is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Supplier Device Package | TO-92 (TO-226) |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 30 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
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