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J111RL1G

JFET N-CH 35V TO92

Manufacturer: onsemi

Categories: JFETs

Quality Control: Learn More

The onsemi JFET N-Channel J111RL1G is a versatile discrete semiconductor designed for various applications. This component features a maximum drain-source voltage (Vds) of 35V and a power dissipation of 350mW. With a typical gate-source cutoff voltage (Vgs off) of 3V at 1µA and a drain current (Idss) of 20mA at 15V (Vgs=0), it offers predictable performance for switching and amplification tasks. The J111RL1G is housed in a standard TO-92 (TO-226) package with through-hole mounting, suitable for robust circuit assembly. Its operating temperature range of -65°C to 150°C ensures reliability in diverse environmental conditions. This JFET is commonly found in industrial control, consumer electronics, and telecommunications equipment. Packaged on Tape & Reel (TR), it is optimized for automated manufacturing processes.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds-
Voltage - Breakdown (V(BR)GSS)35 V
Supplier Device PackageTO-92 (TO-226)
Power - Max350 mW
Resistance - RDS(On)30 Ohms
Voltage - Cutoff (VGS off) @ Id3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0)20 mA @ 15 V

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