onsemi JFET N-Channel J110G is a discrete semiconductor device designed for general-purpose switching and amplification applications. This TO-92 packaged JFET offers a drain-source breakdown voltage of 25V with a typical IDSS of 10mA at 15V and VGS=0. The device features a cutoff voltage (VGS off) of 500mV at 1µA and a maximum power dissipation of 310mW. Its through-hole mounting style and TO-226 package are suitable for various industrial and consumer electronics designs, including audio circuits, RF applications, and sensor interfaces. The operating temperature range extends up to 135°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 135°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | TO-92 (TO-226) |
| Power - Max | 310 mW |
| Resistance - RDS(On) | 18 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10 mA @ 15 V |
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