onsemi JFET N-Channel J110. This TO-92 (TO-226) packaged device offers a 25V breakdown voltage (V(BR)GSS) and a maximum power dissipation of 310 mW. Key parameters include a drain current (Idss) of 10 mA @ 15V and a cutoff voltage (VGS off) of 500 mV @ 1 µA. The on-resistance (RDS(On)) is rated at 18 Ohms. The J110 is suitable for through-hole mounting and operates at temperatures up to 135°C. This component finds application in various electronic circuits across industries such as industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 135°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | TO-92 (TO-226) |
| Power - Max | 310 mW |
| Resistance - RDS(On) | 18 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10 mA @ 15 V |
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