onsemi JFET, N-Channel, J108. This TO-92-3 packaged device offers a 25V breakdown voltage and a maximum power dissipation of 625mW. Key specifications include a drain current (Idss) of 80mA at 15V (Vgs=0) and a typical on-resistance (RDS(On)) of 8 Ohms. The J108 features a VGS(off) of 3V at 10nA. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | TO-92-3 |
| Power - Max | 625 mW |
| Resistance - RDS(On) | 8 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 80 mA @ 15 V |
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