EC3A04B-3-TL-H
JFET N-CH 10MA 100MW ECSP1006-3Manufacturer: onsemi
Categories: JFETs
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onsemi N-Channel JFET, Part Number EC3A04B-3-TL-H. This device features a Drain to Source Voltage (Vdss) of 30V and a maximum Drain Current (Id) of 10 mA. The typical Current Drain (Idss) at Vgs=0 is 1.2 mA @ 10 V. With a maximum power dissipation of 100 mW and an operating temperature up to 150°C, it is suitable for demanding applications. The JFET is offered in a compact ECSP1006-3 surface mount package, ideal for space-constrained designs. Key parameters include a typical Resistance - RDS(On) of 200 Ohms and an Input Capacitance (Ciss) of 4pF @ 10V. This component finds utility in various electronic systems requiring precise signal control and amplification. Supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Current Drain (Id) - Max | 10 mA |
| Supplier Device Package | ECSP1006-3 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 100 mW |
| Resistance - RDS(On) | 200 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V |