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EC3A03B-TL-H

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EC3A03B-TL-H

JFET N-CH 1MA 100MW ECSP1006-3

Manufacturer: onsemi

Categories: JFETs

Quality Control: Learn More

onsemi's EC3A03B-TL-H is an N-Channel JFET designed for high-performance applications. This component features a 40V Drain to Source voltage (Vdss) and a maximum drain current (Id) of 1 mA. It exhibits a typical Idss of 50 µA at 20V (Vgs=0) and a cutoff voltage (Vgs off) of 1.5V at 1 µA. With a maximum power dissipation of 100 mW and an operating junction temperature of up to 150°C, this JFET is suitable for demanding environments. The input capacitance (Ciss) is rated at a maximum of 1.7pF at 10V. Packaged in a compact ECSP1006-3 (3-XFDFN) and supplied on tape and reel, the EC3A03B-TL-H is ideal for surface mount integration in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-XFDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds1.7pF @ 10V
Current Drain (Id) - Max1 mA
Supplier Device PackageECSP1006-3
Drain to Source Voltage (Vdss)40 V
Power - Max100 mW
Voltage - Cutoff (VGS off) @ Id1.5 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0)50 µA @ 20 V

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