The onsemi BSR58LT1G is an N-Channel JFET designed for robust performance in demanding applications. This component features a breakdown voltage (V(BR)GSS) of 40V and a drain current (Idss) of 8mA at 15V with Vgs=0. The on-resistance (RDS(On)) is specified at 60 Ohms. Operating within a temperature range of -65°C to 150°C, the BSR58LT1G is housed in a compact SOT-23-3 (TO-236) surface mount package, suitable for high-density circuit designs. Its maximum power dissipation is 350mW. This JFET is commonly utilized in industries such as consumer electronics and industrial automation. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Power - Max | 350 mW |
| Resistance - RDS(On) | 60 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8 mA @ 15 V |
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