onsemi BFR31LT1G is an N-Channel JFET designed for surface mount applications. This component features a drain-source voltage (Vdss) of 25 V and a maximum power dissipation of 225 mW. The device offers a characteristic drain current (Idss) of 1 mA at 0 Vgs and 10 Vds, with a gate-source cutoff voltage (VGS off) specified at 2.5 V for 0.5 nA Id. Input capacitance (Ciss) is rated at a maximum of 5 pF at 10 Vds. Packaged in a SOT-23-3 (TO-236) footprint and supplied on tape and reel, the BFR31LT1G operates within an extended temperature range of -55°C to 150°C. This JFET is utilized in various electronic circuits, including RF amplification and switching applications across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 225 mW |
| Voltage - Cutoff (VGS off) @ Id | 2.5 V @ 0.5 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 10 V |