onsemi 2SK715W is an N-channel JFET with a maximum drain current (Id) of 50 mA and a drain-source breakdown voltage (Vdss) of 15 V. This device features a typical static drain current (Idss) of 14.5 mA at 5 V and a gate-source cutoff voltage (VGS off) of 600 mV at 100 µA. With a maximum power dissipation of 300 mW and an operating temperature up to 125°C, the 2SK715W is suitable for applications requiring low noise amplification and switching. Its through-hole mounting type and 3-SPA package (SC-72) facilitate integration into various circuit designs. This component finds application in general-purpose amplification and switching circuits across industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-72 |
| Mounting Type | Through Hole |
| Operating Temperature | 125°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 5V |
| Current Drain (Id) - Max | 50 mA |
| Supplier Device Package | 3-SPA |
| Drain to Source Voltage (Vdss) | 15 V |
| Power - Max | 300 mW |
| Voltage - Cutoff (VGS off) @ Id | 600 mV @ 100 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 14.5 mA @ 5 V |
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