onsemi 2SK3796-4-TL-E is an N-Channel JFET designed for applications requiring precise gate control. This component features a Drain current (Idss) of 2.5 mA at 10V and a maximum Drain current (Id) of 10 mA. The Drain to Source voltage (Vdss) rating is 30 V, with a maximum power dissipation of 100 mW. The onsemi 2SK3796-4-TL-E is housed in a compact SMCP (TO-236-3, SC-59, SOT-23-3) package, suitable for surface mounting. Its input capacitance (Ciss) is a maximum of 4 pF at 10V, and it offers a typical Drain-Source On-Resistance (RDS(On)) of 200 Ohms. The cutoff voltage (VGS off) @ Id is 180 mV @ 1 µA. This JFET is utilized in areas such as low-noise amplification and switching circuits within the consumer electronics and industrial automation sectors. The device is supplied in Tape & Reel (TR) packaging and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Current Drain (Id) - Max | 10 mA |
| Supplier Device Package | SMCP |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 100 mW |
| Resistance - RDS(On) | 200 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.5 mA @ 10 V |
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