onsemi 2SK3796-3-TL-E is an N-Channel JFET designed for high-frequency applications. This device features a drain current (Idss) of 1.2 mA at 10 V and a maximum continuous drain current of 10 mA. The drain-to-source breakdown voltage (Vdss) is 30 V, and the power dissipation is rated at 100 mW. With a typical input capacitance (Ciss) of 4 pF at 10 V, it offers excellent high-frequency performance. The JFET type is N-Channel, and it operates within a temperature range of -55°C to 150°C. The device is packaged in a TO-236-3, SC-59, SOT-23-3 (SMCP) and supplied on tape and reel. This component is commonly utilized in consumer electronics and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Current Drain (Id) - Max | 10 mA |
| Supplier Device Package | SMCP |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 100 mW |
| Resistance - RDS(On) | 200 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V |
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