The onsemi 2SK3738-TL-E is an N-channel JFET designed for surface-mount applications. This component features a drain-source breakdown voltage (Vdss) of 40V and a maximum continuous drain current (Id) of 1 mA. The device exhibits a typical gate-source cutoff voltage (VGS off) of 2.3V at 1 µA. With a maximum power dissipation of 100 mW and an operating junction temperature up to 150°C, it is suitable for use in various electronic systems. The input capacitance (Ciss) is specified as a maximum of 1.7 pF at 10V. It is supplied in a compact SC-75 (SOT-416) package, presented on a tape and reel for automated assembly. This JFET is utilized in applications requiring high input impedance and low noise characteristics, commonly found in signal amplification and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1.7pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Current Drain (Id) - Max | 1 mA |
| Supplier Device Package | SMCP |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 100 mW |
| Voltage - Cutoff (VGS off) @ Id | 2.3 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 µA @ 10 V |
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