2SK3666-4-TB-E
JFET N-CH 30V 10MA SMCPManufacturer: onsemi
Categories: JFETs
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onsemi 2SK3666-4-TB-E is an N-Channel JFET designed for surface-mount applications. This component offers a Drain-to-Source Voltage (Vdss) of 30V and a maximum Drain Current (Id) of 10mA. Key electrical characteristics include a typical Idss of 2.5mA at 10V Vds (Vgs=0) and a low cutoff voltage (Vgs off) of 180mV at 1µA. The device features a maximum power dissipation of 200mW and an on-resistance (RDS(On)) of 200 Ohms. Input capacitance (Ciss) is specified at a maximum of 4pF at 10V Vds. The 2SK3666-4-TB-E is supplied in a TO-236-3, SC-59, SOT-23-3 (SMCP) package, delivered on tape and reel. This JFET is utilized in various electronic circuits, including amplification and switching applications within the industrial and consumer electronics sectors. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Current Drain (Id) - Max | 10 mA |
| Supplier Device Package | SMCP |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 200 mW |
| Resistance - RDS(On) | 200 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2.5 mA @ 10 V |
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