The onsemi 2SK3666-3-TB-E is an N-Channel JFET with a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of up to 10 mA. This device features a maximum power dissipation of 200 mW and an on-resistance (RDS(On)) of 200 Ohms. The cutoff voltage (VGS off) is specified at 180 mV @ 1 µA, with a typical drain current (Idss) of 1.2 mA @ 10 V. Input capacitance (Ciss) is a maximum of 4 pF @ 10 V. The 2SK3666-3-TB-E is supplied in a Surface Mount SMCP package, delivered on tape and reel. This component is utilized in various applications including general-purpose amplification and switching circuits, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Current Drain (Id) - Max | 10 mA |
| Supplier Device Package | SMCP |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 200 mW |
| Resistance - RDS(On) | 200 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 180 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V |
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