onsemi 2N5639G is an N-Channel JFET designed for general-purpose switching and amplification applications. This component features a Drain to Source voltage (Vdss) of 30 V and a breakdown voltage (V(BR)GSS) of 35 V. The specified static drain current (Idss) is 25 mA at 20 V (Vgs=0). With a maximum power dissipation of 310 mW, it is packaged in a TO-92 (TO-226) through-hole configuration, suitable for mounting on printed circuit boards. The operating temperature range is -65°C to 150°C. Common applications include audio amplifiers, RF amplifiers, and switching circuits in industrial and consumer electronics. The input capacitance (Ciss) is a maximum of 10pF @ 12V (VGS).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Supplier Device Package | TO-92 (TO-226) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 310 mW |
| Resistance - RDS(On) | 60 Ohms |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25 mA @ 20 V |
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