onsemi 2N5639 is an N-Channel Junction Field-Effect Transistor (JFET) designed for through-hole mounting in a TO-92 (TO-226) package. This component features a maximum drain-to-source voltage (Vdss) of 30V and a breakdown voltage (V(BR)GSS) of 35V. With a maximum power dissipation of 310 mW, the 2N5639 offers a typical drain current (Idss) of 25 mA at 20V (Vgs=0) and a drain-source on-resistance (RDS(On)) of 60 Ohms. Its input capacitance (Ciss) is rated at 10pF maximum at 12V (Vgs). Operating across a wide temperature range of -65°C to 150°C, this JFET is suitable for applications in industrial control, audio amplification, and general-purpose switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Supplier Device Package | TO-92 (TO-226) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power - Max | 310 mW |
| Resistance - RDS(On) | 60 Ohms |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25 mA @ 20 V |
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