The onsemi 2N5460G is a P-Channel JFET designed for general-purpose amplification and switching applications. This device features a 40V breakdown voltage (V(BR)GSS) and a continuous drain current (Idss) of 1 mA at 15V drain-source voltage with zero gate-source voltage. The cutoff voltage (VGS off) is specified at 750 mV for a drain current of 1 µA. With maximum power dissipation of 350 mW, the 2N5460G operates within a temperature range of -65°C to 135°C. It is housed in a standard TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include audio amplification, switching circuits, and voltage-controlled resistors. The device exhibits an input capacitance (Ciss) of 7pF at 15V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 135°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-92 (TO-226) |
| Power - Max | 350 mW |
| Voltage - Cutoff (VGS off) @ Id | 750 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 15 V |
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