onsemi's 2N5460 is a P-channel JFET designed for through-hole mounting in a TO-92 (TO-226) package. This component offers a breakdown voltage of 40 V and a maximum power dissipation of 350 mW. Key electrical characteristics include a drain current (Idss) of 1 mA at 15 V and a gate-source cutoff voltage (VGS off) of 750 mV at 1 µA. The input capacitance (Ciss) is a maximum of 7 pF at 15V. Operating temperature ranges from -65°C to 135°C. This device finds application in various electronic systems, including general-purpose amplification and switching circuits. The 2N5460 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 135°C (TJ) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-92 (TO-226) |
| Power - Max | 350 mW |
| Voltage - Cutoff (VGS off) @ Id | 750 mV @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 15 V |
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