onsemi 2N5458G N-Channel JFET. This TO-92 (TO-226) packaged device offers a Drain to Source Voltage (Vdss) of 25V and a maximum power dissipation of 310mW. Key parameters include a breakdown voltage of 25V (V(BR)GSS) and a gate-source cutoff voltage (VGS off) of 1V at 10nA. The drain current for a zero gate voltage (Idss) is specified at 2mA @ 15V. Input capacitance (Ciss) is a maximum of 7pF @ 15V. This component is suitable for applications in consumer electronics and industrial automation. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 135°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 15V |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | TO-92 (TO-226) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 310 mW |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 10 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2 mA @ 15 V |
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