NXH80B120H2Q0SNG
PIM POWER MODULEManufacturer: onsemi
Categories: IGBT Modules
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The onsemi NXH80B120H2Q0SNG is a Power Integrated Module (PIM) featuring a Dual Boost Chopper configuration. This component offers a 1200 V collector-emitter breakdown voltage and a maximum collector current of 41 A, with a typical Vce(on) of 2.5 V at 15 V gate drive and 40 A. The module has a maximum power dissipation of 103 W and an input capacitance of 9.7 nF at 25 V. It includes an integrated NTC thermistor for thermal monitoring. Designed for chassis mounting, the NXH80B120H2Q0SNG is suitable for applications in industrial and high-power systems. The component operates within a temperature range of -40°C to 150°C (TJ) and is supplied in a 22-PIM/Q0BOOST (55x32.5) package, presented in tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Dual Boost Chopper |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| NTC Thermistor | Yes |
| Supplier Device Package | 22-PIM/Q0BOOST (55x32.5) |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 41 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 103 W |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 9.7 nF @ 25 V |
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