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NXH800A100L4Q2F2S1G

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NXH800A100L4Q2F2S1G

MASS MARKET GEN3 Q2PACK POSITIVE

Manufacturer: onsemi

Categories: IGBT Modules

Quality Control: Learn More

The onsemi NXH800A100L4Q2F2S1G is a Trench Field Stop IGBT Module designed for three-level inverter configurations. This component features a 1000 V collector-emitter breakdown voltage and a maximum collector current of 309 A. The module offers a low on-state voltage of 2.3V at 15V gate-emitter voltage and 400A collector current, with a maximum power dissipation of 714 W. It includes an integrated NTC thermistor for thermal monitoring and operates across a wide temperature range of -40°C to 175°C (TJ). The NXH800A100L4Q2F2S1G is housed in a 51-PIM/Q2PACK (93x47) package suitable for chassis mounting. This device is commonly utilized in power electronics applications, including industrial motor drives and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 400A
NTC ThermistorYes
Supplier Device Package51-PIM/Q2PACK (93x47)
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)309 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Power - Max714 W
Current - Collector Cutoff (Max)20 µA
Input Capacitance (Cies) @ Vce49.7 nF @ 20 V

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