NXH50M65L4C2ESG
650V 50A CONVERTER-INVERTER-PFCSManufacturer: onsemi
Categories: IGBT Modules
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The onsemi NXH50M65L4C2ESG is a three-phase inverter IGBT module designed for high-voltage power conversion applications. This component features a 650V collector-emitter breakdown voltage and a maximum collector current of 50A, with a typical on-state voltage of 2.2V at 15V gate-emitter voltage and 75A collector current. The module integrates a single-phase bridge rectifier input and a converter-inverter-PFC configuration, making it suitable for applications in industrial automation, electric vehicle powertrains, and renewable energy systems. It includes an NTC thermistor for thermal monitoring and operates across a temperature range of -40°C to 150°C. The NXH50M65L4C2ESG is housed in a 27-DIP package with a through-hole mounting type.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 27-PowerDIP Module (1.858"", 47.20mm) |
| Mounting Type | Through Hole |
| Input | Single Phase Bridge Rectifier |
| Configuration | Three Phase Inverter |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 75A |
| NTC Thermistor | Yes |
| Supplier Device Package | 27-DIP |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Power - Max | 20 mW |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 2.608 nF @ 20 V |
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