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NXH50C120L2C2ESG

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NXH50C120L2C2ESG

IGBT MODULE, CIB 1200 V, 50 A IG

Manufacturer: onsemi

Categories: IGBT Modules

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The onsemi NXH50C120L2C2ESG is a high-performance IGBT module designed for demanding power applications. This module features a three-phase inverter configuration with a brake function, enabling efficient power control in various systems. It boasts a robust 1200 V collector-emitter breakdown voltage and a 50 A continuous collector current rating, making it suitable for high-power motor drives and industrial automation. The module incorporates a three-phase bridge rectifier input and includes an integrated NTC thermistor for thermal monitoring. With a low on-state voltage (Vce(on)) of 2.4 V at 15 V gate-emitter voltage and 50 A collector current, it minimizes conduction losses. The NXH50C120L2C2ESG is presented in a 26-DIP through-hole package, facilitating straightforward integration into existing designs. Its wide operating temperature range of -40°C to 150°C (TJ) ensures reliability in harsh environments. This component is commonly utilized in industrial power supplies, electric vehicle powertrains, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case26-PowerDIP Module (1.199"", 47.20mm)
Mounting TypeThrough Hole
InputThree Phase Bridge Rectifier
ConfigurationThree Phase Inverter with Brake
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 50A
NTC ThermistorYes
Supplier Device Package26-DIP
IGBT Type-
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max20 mW
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce11.897 nF @ 20 V

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