NXH50C120L2C2ES1G
IGBT MOD 1200V 50A 26DIPManufacturer: onsemi
Categories: IGBT Modules
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The onsemi NXH50C120L2C2ES1G is a high-performance IGBT module designed for demanding power applications. This three-phase inverter module features a robust 1200 V collector-emitter breakdown voltage and a 50 A continuous collector current rating. It incorporates a three-phase bridge rectifier input and a brake function, making it suitable for motor control and power conversion systems. The module offers a low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 50 A collector current, minimizing conduction losses. With a Cies of 11.89 nF @ 20 V, it facilitates efficient switching. The NXH50C120L2C2ES1G is housed in a 26-DIP package with a through-hole mounting type for reliable integration into existing designs. An integrated NTC thermistor aids in thermal management, operating within a temperature range of -40°C to 150°C. This component finds application in industrial automation, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 26-PowerDIP Module (1.199"", 47.20mm) |
| Mounting Type | Through Hole |
| Input | Three Phase Bridge Rectifier |
| Configuration | Three Phase Inverter with Brake |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| NTC Thermistor | Yes |
| Supplier Device Package | 26-DIP |
| IGBT Type | - |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 20 mW |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 11.89 nF @ 20 V |
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