Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

NXH450B100H4Q2F2PG-R

Banner
productimage

NXH450B100H4Q2F2PG-R

1000V75A FSIII IGBT MID SPEED WI

Manufacturer: onsemi

Categories: IGBT Modules

Quality Control: Learn More

onsemi NXH450B100H4Q2F2PG-R is a 1000V, 101A Half Bridge Inverter IGBT module. This module features a robust design with a maximum power dissipation of 234W and a collector-emitter voltage of 1000V. The Vce(on) is specified at 2.25V maximum at 15V gate-emitter voltage and 150A collector current. Input capacitance (Cies) is 9.342 nF @ 20V. The device includes an integrated NTC thermistor for thermal monitoring and is designed for chassis mounting. Operating temperature ranges from -40°C to 150°C (TJ). The module is supplied in a 56-PIM (93x47) package, suitable for high-power applications in industries such as industrial automation, power supplies, and renewable energy systems. Product is supplied in Tray packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge Inverter
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.25V @ 15V, 150A
NTC ThermistorYes
Supplier Device Package56-PIM (93x47)
IGBT Type-
Current - Collector (Ic) (Max)101 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Power - Max234 W
Current - Collector Cutoff (Max)600 µA
Input Capacitance (Cies) @ Vce9.342 nF @ 20 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
NXH80B120L2Q0SNG

POWER INTEGRATED MODULE, DUAL BO

product image
SNXH160T120L2Q1PG

160A 1200V PIM Q1PACK

product image
NXH100B120H3Q0STG

IGBT MODULE 1200V 50A 186W PIM22