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NXH35C120L2C2S1G

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NXH35C120L2C2S1G

IGBT MOD 1200V 35A 26DIP

Manufacturer: onsemi

Categories: IGBT Modules

Quality Control: Learn More

The onsemi NXH35C120L2C2S1G is a high-performance IGBT module designed for demanding power applications. Featuring a robust 1200 V collector-emitter breakdown voltage and a 35 A collector current rating, this module excels in three-phase inverter configurations with integrated braking functionality. The device incorporates a three-phase bridge rectifier input and an NTC thermistor for thermal monitoring, ensuring reliable operation across a wide temperature range of -40°C to 150°C. With a low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 35 A collector current, it minimizes conduction losses. The input capacitance (Cies) is specified at 8.33 nF @ 20 V. Packaged in a 26-DIP through-hole configuration, this module is suitable for industrial motor drives, renewable energy systems, and power supply applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / Case26-PowerDIP Module (1.199"", 47.20mm)
Mounting TypeThrough Hole
InputThree Phase Bridge Rectifier
ConfigurationThree Phase Inverter with Brake
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 35A
NTC ThermistorYes
Supplier Device Package26-DIP
IGBT Type-
Current - Collector (Ic) (Max)35 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max20 mW
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce8.33 nF @ 20 V

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