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NXH350N100H4Q2F2SG

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NXH350N100H4Q2F2SG

IC MODULE PIM 350A 1000V

Manufacturer: onsemi

Categories: IGBT Modules

Quality Control: Learn More

The onsemi NXH350N100H4Q2F2SG is a highly integrated IGBT module designed for demanding power conversion applications. This Trench Field Stop device offers a 1000 V collector-emitter breakdown voltage and a robust 303 A continuous collector current (Ic). Featuring a three-level inverter configuration, this module is optimized for high-efficiency operation in industrial motor drives, electric vehicle powertrains, and renewable energy systems. The NXH350N100H4Q2F2SG boasts a low collector-emitter saturation voltage (Vce(on)) of 1.8V at 15V gate-emitter voltage and 375A collector current, contributing to reduced conduction losses and improved thermal performance. It incorporates an integrated NTC thermistor for accurate temperature monitoring, enhancing system reliability. The module is supplied in a 42-PIM/Q2PACK (93x47) chassis mount package, facilitating efficient heat dissipation and simplifying system integration. The maximum power dissipation is rated at 592 W, with an operating temperature range of -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 375A
NTC ThermistorYes
Supplier Device Package42-PIM/Q2PACK (93x47)
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)303 A
Voltage - Collector Emitter Breakdown (Max)1000 V
Power - Max592 W
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce24.146 nF @ 20 V

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