NXH350N100H4Q2F2P1G-R
GEN1.5 1500V MASS MARKETManufacturer: onsemi
Categories: IGBT Modules
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onsemi NXH350N100H4Q2F2P1G-R is a Trench Field Stop IGBT module designed for three-level inverter configurations. This component offers a 1000 V collector-emitter breakdown voltage and a maximum collector current of 303 A. Featuring a low Vce(on) of 2.3V at 15V gate-emitter voltage and 375A collector current, it achieves a maximum power dissipation of 592 W. The module includes an integrated NTC thermistor for thermal monitoring and is housed in a 42-PIM/Q2PACK (93x47) package suitable for chassis mounting. Input capacitance (Cies) is specified at 24.146 nF at 20 V. The operating temperature range is -40°C to 175°C (TJ). This device finds application in power conversion systems across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Three Level Inverter |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 375A |
| NTC Thermistor | Yes |
| Supplier Device Package | 42-PIM/Q2PACK (93x47) |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 303 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Power - Max | 592 W |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 24.146 nF @ 20 V |
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