Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

NXH240B120H3Q1S1G-R

Banner
productimage

NXH240B120H3Q1S1G-R

150KW 110V Q1BOOST SOLDER PIN

Manufacturer: onsemi

Categories: IGBT Modules

Quality Control: Learn More

The onsemi NXH240B120H3Q1S1G-R is a Trench Field Stop IGBT module designed for demanding power applications. This three-level inverter configuration offers a 1200 V collector-emitter breakdown voltage and a continuous collector current of 92 A. Key electrical characteristics include a maximum on-state voltage of 2.7 V at 15 V gate-emitter voltage and 80 A collector current, with a low collector cutoff current of 150 µA. The module features a chassis mount for robust thermal management and a 32-PIM (71x37.4) package. Operating across a temperature range of -40°C to 150°C (TJ), it is suitable for industrial motor drives, renewable energy systems, and electric vehicle charging infrastructure. The input capacitance (Cies) is specified at 19.082 nF @ 20 V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Level Inverter
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 80A
NTC ThermistorNo
Supplier Device Package32-PIM (71x37.4)
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)92 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max266 W
Current - Collector Cutoff (Max)150 µA
Input Capacitance (Cies) @ Vce19.082 nF @ 20 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
NXH80B120L2Q0SNG

POWER INTEGRATED MODULE, DUAL BO

product image
SNXH160T120L2Q1PG

160A 1200V PIM Q1PACK

product image
NXH100B120H3Q0STG

IGBT MODULE 1200V 50A 186W PIM22