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NXH160T120L2Q1SG

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NXH160T120L2Q1SG

PIM Q1 SPLIT T-TYPE NPC 160A 120

Manufacturer: onsemi

Categories: IGBT Modules

Quality Control: Learn More

The onsemi NXH160T120L2Q1SG is a Trench Field Stop IGBT Module offering a 1200 V collector-emitter breakdown voltage. This module features a half-bridge configuration and is rated for a continuous collector current of 140 A, with a maximum power dissipation of 280 W. The device exhibits a low on-state voltage, Vce(on), of 2.5 V at 15 V gate-emitter voltage and 160 A collector current. Designed for chassis mounting, it includes an integrated NTC thermistor for thermal monitoring. Its high input capacitance, Cies, is 38164 pF at 25 V. This component is widely utilized in industrial applications requiring robust power switching capabilities.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseModule
Mounting TypeChassis Mount
InputStandard
ConfigurationHalf Bridge
Operating Temperature150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 160A
NTC ThermistorYes
Supplier Device Package30-PIM (71x37.4)
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)140 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max280 W
Current - Collector Cutoff (Max)800 µA
Input Capacitance (Cies) @ Vce38164 pF @ 25 V

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