VEC2616-TL-W
MOSFET N/P-CH 60V 3A/2.5A SOT28Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi VEC2616-TL-W is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This device features a 60V breakdown voltage with continuous drain currents of 3A for the N-channel and 2.5A for the P-channel, specified at 25°C. The MOSFET array utilizes a logic-level gate requiring only 4V drive. Key electrical parameters include a maximum Rds(On) of 80mOhm at 1.5A and 10V Vgs, and a maximum gate charge of 10nC at 10V Vgs. Input capacitance (Ciss) is rated at 505pF maximum at 20V Vds. The device is packaged in an 8-SMD, Flat Leads (SOT-28FL/VEC8) configuration, suitable for surface mounting and rated for a maximum power dissipation of 1W. Operating temperature range is up to 150°C (TJ). This component finds application in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 20V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SOT-28FL/VEC8 |
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