VEC2616-TL-H-Z-W
MOSFET N/P-CH 60V 3A/2.5A SOT28Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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This onsemi MOSFET array, part number VEC2616-TL-H-Z-W, features N and P-channel configurations within a SOT-28FL/VEC8 surface mount package. It offers a Drain-to-Source Voltage (Vdss) of 60V with continuous drain currents of 3A (Ta) for the N-channel and 2.5A (Ta) for the P-channel, both at 25°C. Key electrical parameters include a maximum power dissipation of 1W (Ta) and Rds On ratings of 80mOhm @ 1.5A, 10V for the N-channel and 137mOhm @ 1.5A, 10V for the P-channel. Gate charge (Qg) is specified at 10nC for the N-channel and 11nC for the P-channel, both at 10V. Input capacitance (Ciss) is a maximum of 505pF @ 20V. The device operates up to a junction temperature of 150°C and is supplied in Tape & Reel (TR) packaging. This component finds application in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 20V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 10V, 137mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V, 11nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SOT-28FL/VEC8 |
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