VEC2616-TL-H-Z
MOSFET N/P-CH 60V 3A/2.5A SOT28Manufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The onsemi VEC2616-TL-H-Z is a MOSFET array featuring N-channel and P-channel configurations, designed for efficient switching applications. This component operates with a Drain to Source Voltage (Vdss) of 60V and offers a continuous drain current capability of 3A for the N-channel and 2.5A for the P-channel, both specified at 25°C. The MOSFET array is optimized for logic-level gate drive, requiring only 4V for activation. Key electrical parameters include a maximum Rds On of 80mOhm at 1.5A and 10V Vgs, a gate charge (Qg) of 10nC maximum at 10V Vgs, and an input capacitance (Ciss) of 505pF maximum at 20V Vds. Housed in a SOT-28FL/VEC8 package, it supports a maximum power dissipation of 1W and is supplied in Tape & Reel packaging. This device is suitable for use in automotive and industrial applications requiring compact, high-performance power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 20V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SOT-28FL/VEC8 |
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