VEC2616-TL-H
MOSFET N/P-CH 60V 3A/2.5A SOT28Manufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi VEC2616-TL-H is a dual MOSFET array featuring complementary N-channel and P-channel devices within a single SOT-28FL/VEC8 package. This component is rated for a 60V drain-source voltage and offers continuous drain currents of 3A for the N-channel and 2.5A for the P-channel at 25°C. With a power dissipation of 1W, it utilizes MOSFET technology and is suitable for surface mount applications. Key electrical parameters include a typical Rds On of 80mOhm at 1.5A, 10V, and a logic-level gate drive capability. The VEC2616-TL-H is designed for operation up to a junction temperature of 150°C and is supplied in tape and reel packaging. This device finds utility in various applications including power management and battery charging circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 20V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SOT-28FL/VEC8 |