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VEC2315-TL-W

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VEC2315-TL-W

MOSFET 2P-CH 60V 2.5A SOT28

Manufacturer: onsemi

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The onsemi VEC2315-TL-W is a dual P-channel MOSFET array designed for high-density power management applications. Featuring a 60V drain-to-source voltage and a continuous drain current capability of 2.5A at 25°C, this component is suitable for demanding tasks. The MOSFET array is configured with two P-channel transistors, offering a low Rds(On) of 137mOhm maximum at 1.5A and 10V Vgs, ensuring efficient power transfer. Its logic-level gate drive requires only 4V for activation, simplifying design integration with lower voltage control signals. With a maximum power dissipation of 1W and an operating temperature up to 150°C (TJ), the VEC2315-TL-W is robust for use in automotive and industrial control systems. The component is supplied in a Tape & Reel (TR) package, utilizing the SOT-28FL/VEC8 surface mount configuration with flat leads. Key electrical characteristics include a gate charge of 11nC maximum at 10V and an input capacitance of 420pF maximum at 20V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1W
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.5A
Input Capacitance (Ciss) (Max) @ Vds420pF @ 20V
Rds On (Max) @ Id, Vgs137mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
FET FeatureLogic Level Gate, 4V Drive
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device PackageSOT-28FL/VEC8

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