SI9955DY
MOSFET 2N-CH 50V 3A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi SI9955DY is a dual N-channel MOSFET array housed in an 8-SOIC package. This device offers a continuous drain current capability of 3A at 25°C with a drain-to-source voltage (Vdss) of 50V. It features a maximum on-resistance (Rds On) of 130mOhm at 3A and 10V Vgs. The gate charge (Qg) is specified at a maximum of 30nC at 10V, with input capacitance (Ciss) at 345pF (max) at 15V Vds. With a power dissipation rating of 900mW, this surface mount component operates across a temperature range of -55°C to 150°C. Applications for this MOSFET array include power management and switching circuits across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 15V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |