SI4542DY
MOSFET N/P-CH 30V 6A 8SOICManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi SI4542DY is a PowerTrench® MOSFET array featuring complementary N-channel and P-channel devices in an 8-SOIC package. This surface mount component offers a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. Key electrical parameters include a maximum Rds On of 28mOhm at 6A, 10V, and a gate charge (Qg) of 13nC at 5V. Input capacitance (Ciss) is specified at 830pF at 15V. The device supports a maximum power dissipation of 1W and operates within a temperature range of -55°C to 175°C. This MOSFET array is suitable for applications in automotive and industrial segments.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 15V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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