NXH040F120MNF1PTG
SIC 4N-CH 1200V 30A 22PIMManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NXH040F120MNF1PTG is a Silicon Carbide (SiC) 4 N-channel MOSFET array designed for high-voltage applications. This module features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous drain current capability of 30A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 56mOhm at 25A and 20V, contributing to efficient power conversion. With a maximum power dissipation of 74W at 175°C (Tj), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 122.1nC and input capacitance (Ciss) of 1505pF at 800V. The NXH040F120MNF1PTG is offered in a 22-PIM module package with chassis mount for robust thermal management. This component finds utility in power factor correction, inverters, and motor control applications within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 74W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1505pF @ 800V |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 25A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 122.1nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.3V @ 10mA |
| Supplier Device Package | 22-PIM (33.8x42.5) |
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