NXH030P120M3F1PTG
MOSFET 2N-CH 1200V 42AManufacturer: onsemi
Categories: FET, MOSFET Arrays
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onsemi NXH030P120M3F1PTG is a 2 N-Channel Silicon Carbide (SiC) MOSFET array designed for demanding power applications. This component features a 1200V (1.2kV) drain-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C (Tc). With a low on-resistance of 38.5mOhm at 30A and 18V (Vgs), it offers efficient power switching. The NXH030P120M3F1PTG boasts a maximum power dissipation of 100W (Tj) and a high operating temperature range of -40°C to 175°C (Tj). Key parameters include a gate charge (Qg) of 110nC at 18V and input capacitance (Ciss) of 2271pF at 800V. The device is presented in a module package for chassis mounting and is supplied in tray packaging. This SiC MOSFET array is suitable for use in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 100W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2271pF @ 800V |
| Rds On (Max) @ Id, Vgs | 38.5mOhm @ 30A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 15mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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