NXH030F120M3F1PTG
30M OHM 1200V 40A M3S SIC FULL BManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NXH030F120M3F1PTG is a 1200V (1.2kV) Silicon Carbide (SiC) MOSFET module featuring four N-channel depletion mode FETs configured as a full bridge. This SiCFET array offers a continuous drain current of 38A at 25°C (Tc) and a maximum on-resistance of 38.5mOhm at 30A and 18V. With a maximum power dissipation of 100W (Tj), the device operates across a temperature range of -40°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 110nC at 18V and input capacitance (Ciss) of 2246pF at 800V. The NXH030F120M3F1PTG is housed in a 22-PIM (33.8x42.5) module with chassis mount capability. This component is suitable for applications in power conversion, motor drives, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 48 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| Power - Max | 100W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2246pF @ 800V |
| Rds On (Max) @ Id, Vgs | 38.5mOhm @ 30A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 18V |
| FET Feature | Depletion Mode |
| Vgs(th) (Max) @ Id | 4.4V @ 15mA |
| Supplier Device Package | 22-PIM (33.8x42.5) |
| Grade | - |
| Qualification | - |
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