NXH015P120M3F1PTG
15M OHM 1200V 40A M3S SIC HALF BManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NXH015P120M3F1PTG is a Silicon Carbide (SiC) MOSFET array featuring a 1200V (1.2kV) drain-to-source voltage. This module offers a continuous drain current of 77A at 25°C (Tc) and a maximum power dissipation of 198W (Tj). With a low on-resistance of 20mOhm at 60A and 18V, and a gate charge of 211nC at 18V, it is designed for high-efficiency power conversion. The device has a chassis mount configuration and an operating temperature range of -40°C to 175°C (TJ). Its performance characteristics make it suitable for applications in electric vehicle charging, industrial motor drives, and renewable energy inverters. The component is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 48 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 198W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 77A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 4696pF @ 800V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 60A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 211nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 30mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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