NXH010P120M3F1PTG
MOSFET 2N-CH 1200V 105AManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi NXH010P120M3F1PTG is a 2 N-Channel Silicon Carbide (SiC) MOSFET module featuring a 1200V (1.2kV) drain-source voltage and a continuous drain current of 105A at 25°C (Tc). This chassis mount device offers a maximum power dissipation of 272W (Tj). Key electrical parameters include a gate charge (Qg) of 314nC at 18V, input capacitance (Ciss) of 6451pF at 800V, and an on-resistance (Rds On) of 14.5mOhm at 90A and 18V. The threshold voltage (Vgs(th)) is a maximum of 4.4V at 45mA. Operating across a temperature range of -40°C to 175°C (Tj), this SiC MOSFET is suitable for demanding applications in power conversion, electric vehicles, and industrial motor drives. The component is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 272W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 6451pF @ 800V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 90A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 314nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 45mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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