NXH010P120M3F1PG
10M OHM 1200V 40A M3S SIC HALF BManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NXH010P120M3F1PG is a Silicon Carbide (SiC) MOSFET array designed for high-voltage applications. This module features a 1200V (1.2kV) drain-source voltage rating and a continuous drain current capability of 105A at 25°C (Tc). The device offers a low on-resistance of 14.5mOhm maximum at 90A and 18V Vgs. Its configuration includes 2 N-Channel MOSFETs in a half-bridge arrangement, making it suitable for power factor correction (PFC) and inverter stages in various industrial power conversion systems. The module supports chassis mounting and operates across a temperature range of -40°C to 175°C (TJ), with a maximum power dissipation of 272W (Tj). Key parameters include a gate charge (Qg) of 314nC at 18V and input capacitance (Ciss) of 6451pF at 800V. This component is commonly utilized in electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 48 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 272W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 6451pF @ 800V |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 90A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 314nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 45mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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