NXH008P120M3F1PTG
MOSFET 2N-CH 1200V 145AManufacturer: onsemi
Categories: FET, MOSFET Arrays
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The onsemi NXH008P120M3F1PTG is a Silicon Carbide (SiC) MOSFET array featuring two N-channel devices configured as a half-bridge. This module offers a 1200V (1.2kV) drain-source voltage capability and a continuous drain current of 145A at 25°C (Tc). With a maximum power dissipation of 382W (Tj), it is designed for chassis mounting. Key electrical parameters include a low on-resistance of 10.9mOhm at 120A and 18V, a gate charge (Qg) of 419nC at 18V, and input capacitance (Ciss) of 8334pF at 800V. The threshold voltage (Vgs(th)) is rated at 4.4V maximum at 60mA. This component operates across a temperature range of -40°C to 175°C (TJ). Applications for this SiC MOSFET array include high-power conversion systems in electric vehicles and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 382W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 145A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 8334pF @ 800V |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 120A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 419nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 60mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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