NXH008P120M3F1PG
8M OHM 1200V 40A M3S SIC HALF BRManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
onsemi NXH008P120M3F1PG is a Silicon Carbide (SiC) MOSFET array featuring a 1200V (1.2kV) drain-source voltage and a continuous drain current of 145A at 25°C (Tc). This chassis-mount module is configured as two N-channel MOSFETs in a half-bridge arrangement, with a maximum power dissipation of 382W at the junction temperature. The Rds On is specified at a maximum of 10.9mOhm at 120A and 18V, and the input capacitance (Ciss) is 8334pF at 800V. The device operates across an extended temperature range of -40°C to 175°C (TJ). This component is suitable for high-power applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 48 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 382W (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 145A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 8334pF @ 800V |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 120A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 419nC @ 18V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 60mA |
| Supplier Device Package | - |
| Grade | - |
| Qualification | - |
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