NXH006P120M3F2PTHG
MOSFET 2N-CH 1200V 191A 36PIMManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 1200V (1.2kV) 191A (Tc) 556W (Tc) Chassis Mount 36-PIM (56.7x62.8)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 556W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 191A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 11914pF @ 800V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 100A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 622nC @ 20V |
| FET Feature | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.4V @ 80mA |
| Supplier Device Package | 36-PIM (56.7x62.8) |
| Grade | - |
| Qualification | - |
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