NXH004P120M3F2PTNG
SILICON CARBIDE (SIC) MODULE ELManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 1200V (1.2kV) 338A (Tj) 1.1kW (Tj) Chassis Mount 36-PIM (56.7x62.8)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.1kW (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 338A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 16410pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 200A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 876nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.4V @ 120mA |
| Supplier Device Package | 36-PIM (56.7x62.8) |
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