NXH003P120M3F2PTNG
SILICON CARBIDE (SIC) MODULE ELManufacturer: onsemi
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Mosfet Array 1200V (1.2kV) 435A (Tj) 1.48kW (Tj) Chassis Mount 36-PIM (56.7x62.8)
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1.48kW (Tj) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 435A (Tj) |
| Input Capacitance (Ciss) (Max) @ Vds | 20889pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 200A, 18V |
| Gate Charge (Qg) (Max) @ Vgs | 1200nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.4V @ 160mA |
| Supplier Device Package | 36-PIM (56.7x62.8) |
Request a Quote
Clients Also Buy
NVLJD4007NZTBG
MOSFET 2N-CH 30V 0.245A 6WDFN
NVMFD5485NLT1G
MOSFET 2N-CH 60V 5.3A 8DFN
ECH8691-TL-W
MOSFET 2P-CH ECH8
